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Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects : Physics of nitride-based nanostructured light-emitting devices

Identifieur interne : 002855 ( Main/Repository ); précédent : 002854; suivant : 002856

Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects : Physics of nitride-based nanostructured light-emitting devices

Auteurs : RBID : Pascal:11-0388219

Descripteurs français

Pascal (Inist)
- Approximation liaison forte, Modèle microscopique, Interaction coulombienne, Interaction électron phonon, Délocalisation électronique, Equation Bloch, Méthode numérique, Elément matriciel, Théorie n corps, Spectre optique, Transition optique, Transition dipolaire, Nitrure d'indium, Point quantique, Couche autoassemblée, Semiconducteur, Nitrure de gallium.

English descriptors

KwdEn :
- Bloch equations, Coulomb interaction, Dipolar transition, Electron delocalization, Electron-phonon interactions, Gallium nitride, Indium nitride, Many body theory, Matrix elements, Microscopic model, Numerical method, Optical spectrum, Optical transition, Quantum dots, Self-assembled layers, Semiconductor materials, Tight binding approximation.

Abstract

A microscopic theory for optical properties of self-assembled quantum-dot systems is presented. For nitride-based material systems, the single-particle states are determined from atomistic tight-binding (TB) calculations. This includes not only localized quantum-dot states but also delocalized wetting-layer states, since both contribute to the optical properties and are coupled via interaction processes. The TB wave functions are used to calculate matrix elements for optical dipole transitions as well as Coulomb and LO-phonon interaction of carriers. Absorption and gain spectra are investigated via a solution of the semiconductor Bloch equations including Coulomb interaction effects as well as dephasing due to carrier interaction with LO-phonons. Numerical results are presented for InN/ GaN QD-WL systems and allow to investigate the excitation-density dependence of the optical spectra for this particular system.

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<front><div type="abstract" xml:lang="en">A microscopic theory for optical properties of self-assembled quantum-dot systems is presented. For nitride-based material systems, the single-particle states are determined from atomistic tight-binding (TB) calculations. This includes not only localized quantum-dot states but also delocalized wetting-layer states, since both contribute to the optical properties and are coupled via interaction processes. The TB wave functions are used to calculate matrix elements for optical dipole transitions as well as Coulomb and LO-phonon interaction of carriers. Absorption and gain spectra are investigated via a solution of the semiconductor Bloch equations including Coulomb interaction effects as well as dephasing due to carrier interaction with LO-phonons. Numerical results are presented for InN/ GaN QD-WL systems and allow to investigate the excitation-density dependence of the optical spectra for this particular system.</div>
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Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects : Physics of nitride-based nanostructured light-emitting devices

Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects : Physics of nitride-based nanostructured light-emitting devices

Descripteurs français

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Abstract

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